unisonic technologies co., ltd pzta94 preliminary pnp silicon transistor www.unisonic.com.tw 1 of 3 copyright ? 2012 unisonic technologies co., ltd qw-r207-026.a high voltage transistor ? features * collector-emitter voltage: v ceo =-400v * collector dissipation: p d(max) =625mw * low collector-emitter saturation voltage ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 pzta94l-aa3-r PZTA94G-AA3-R sot-223 b c e tape reel
pzta94 preliminary pnp silicon transistor unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r207-026.a ? absolute maximum rating (operating temperature range applies unless otherwise specified) parameter symbol ratings unit collector-base voltage v cbo -400 v collector-emitter voltage v ceo -400 v emitter-base voltage v ebo -6 v collector power dissipation(t a =25c) p d 625 mw collector current i c -300 ma junction temperature t j +150 c storage temperature t stg -40 ~ +150 c note absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? electrical characteristics (t j =25c, unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage bv cbo i c =-100 a, i e =0 -400 v collector-emitter breakdown voltage bv ceo i c =-1ma, i b =0 -400 v collector-emitter breakdown voltage bv ces i c =-100 a, v be =0 -400 v emitter-base breakdown voltage bv ebo i e =-100 a, i c =0 -5 v collector cut-off current i cbo v cb =-300v, i e =0 -100 na collector cut-off current i ces v ce =-400v, v be =0 -1 a emitter cut-off current i ebo v eb =-4v, i c =0 100 na dc current gain(note) h fe v ce =-10v, i c =-1ma v ce =-10v, i c =-10ma v ce =-10v, i c =-50ma v ce =-10v, i c =-100ma 60 70 70 40 300 collector-emitter satu ration voltage v ce(sat ) i c =-10ma, i b =-1ma i c =-50ma, i b =-5ma -0.20 -0.5 v base-emitter satura tion voltage v be(sat) i c =-10ma, i b =-1ma -0.75 v output capacitance c ob v cb =-20v, i e =0, f=1mhz 7 pf note: pulse test: pulse width<300 s, duty cycle<2%
pzta94 preliminary pnp silicon transistor unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r207-026.a utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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